HGT1S12N60A4DS product image

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Product details

HGT1S12N60A4DS

Availability on request

Manufacturer: onsemi
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT 600 V 54 A 167 W Surface Mount D²PAK (TO-263)

Datasheet View datasheet

Specifications

Base Product Number: HGT1S12
Current - Collector (Ic) (Max): 54 A
Current - Collector Pulsed (Icm): 96 A
Gate Charge: 78 nC
IGBT Type: -
Input Type: Standard
Mfr: onsemi
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max: 167 W
Reverse Recovery Time (trr): 30 ns
Series: -
Supplier Device Package: D²PAK (TO-263)
Switching Energy: 55µJ (on), 50µJ (off)
Td (on/off) @ 25°C: 17ns/96ns
Test Condition: 390V, 12A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Voltage - Collector Emitter Breakdown (Max): 600 V