FGA50N100BNTDTU product image

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Product details

FGA50N100BNTDTU

Availability on request

Manufacturer: onsemi
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT NPT and Trench 1000 V 50 A 156 W Through Hole TO-3P

Datasheet View datasheet

Specifications

Base Product Number: FGA50N100
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 100 A
Gate Charge: 275 nC
IGBT Type: NPT and Trench
Input Type: Standard
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-3P-3, SC-65-3
Power - Max: 156 W
Reverse Recovery Time (trr): 1.5 µs
Series: -
Supplier Device Package: TO-3P
Switching Energy: -
Td (on/off) @ 25°C: -
Test Condition: -
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Voltage - Collector Emitter Breakdown (Max): 1000 V