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Product details

APTGF50A120T1G

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - IGBTs - Modules
Package: Bulk

Description

IGBT Module NPT Half Bridge 1200 V 75 A 312 W Chassis Mount SP1

Datasheet Not provided

Specifications

Configuration: Half Bridge
Current - Collector (Ic) (Max): 75 A
Current - Collector Cutoff (Max): 250 µA
IGBT Type: NPT
Input: Standard
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Mfr: Microsemi Corporation
Mounting Type: Chassis Mount
NTC Thermistor: Yes
Operating Temperature: -
Package: Bulk
Package / Case: SP1
Power - Max: 312 W
Series: -
Supplier Device Package: SP1
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max): 1200 V