IRF7106 product image

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Product details

IRF7106

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Arrays
Package: Tube

Description

Mosfet Array N and P-Channel 20V 3A, 2.5A 2W Surface Mount 8-SO

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: N and P-Channel
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Package: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power - Max: 2W
Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 10V
Series: HEXFET®
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA