2SK2719(F) product image

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Product details

2SK2719(F)

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 900 V 3A (Ta) 125W (Tc) Through Hole TO-3P(N)

Datasheet Not provided

Specifications

Base Product Number: 2SK2719
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 900 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Tube
Package / Case: TO-3P-3, SC-65-3
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1.5A, 10V
Series: -
Supplier Device Package: TO-3P(N)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 1mA