SI4511DY-T1-E3 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

SI4511DY-T1-E3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Arrays
Package: Cut Tape (CT), Digi-Reel®

Description

Mosfet Array N and P-Channel 20V 7.2A, 4.6A 1.1W Surface Mount 8-SOIC

Datasheet View datasheet

Specifications

Base Product Number: SI4511
Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Package: Cut Tape (CT), Digi-Reel®
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power - Max: 1.1W
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V
Series: -
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA