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2N2369 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

2N2369

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - RF
Package
Bulk

Description

RF Transistor NPN 15V 200mA 680mW Through Hole TO-18 (TO-206AA)

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA, 1V
Frequency - Transition
-
Gain
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Noise Figure (dB Typ @ f)
-
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-206AA, TO-18-3 Metal Can
Power - Max
680mW
Series
-
Supplier Device Package
TO-18 (TO-206AA)
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
15V