DMTH31M7LPSQ-13 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

DMTH31M7LPSQ-13

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 30 V 30A (Ta), 100A (Tc) 1.3W (Ta), 113W (Tc) Surface Mount PowerDI5060-8

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5741 pF @ 15 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Power Dissipation (Max): 1.3W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Series: Automotive, AEC-Q101
Supplier Device Package: PowerDI5060-8
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±16V
Vgs(th) (Max) @ Id: 3V @ 250µA