DMTH10H2M5STLW-13 product image

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Product details

DMTH10H2M5STLW-13

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 100 V 215A (Tc) 5.8W (Ta), 230.8W (Tc) Surface Mount POWERDI1012-8

Datasheet View datasheet

Specifications

Base Product Number: DMTH10
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 124.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8450 pF @ 50 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Power Dissipation (Max): 5.8W (Ta), 230.8W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Series: -
Supplier Device Package: POWERDI1012-8
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA