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Product details

NXH75M65L4Q1SG

Availability on request

Manufacturer: onsemi
Category: Transistors - IGBTs - Modules
Package: Tray

Description

IGBT Module Trench Field Stop Half Bridge 650 V 59 A 86 W Chassis Mount 56-PIM (93x47)

Datasheet View datasheet

Specifications

Configuration: Half Bridge
Current - Collector (Ic) (Max): 59 A
Current - Collector Cutoff (Max): 300 µA
IGBT Type: Trench Field Stop
Input: Standard
Input Capacitance (Cies) @ Vce: 5.665 nF @ 30 V
Mfr: onsemi
Mounting Type: Chassis Mount
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Package: Tray
Package / Case: Module
Power - Max: 86 W
Series: -
Supplier Device Package: 56-PIM (93x47)
Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max): 650 V