NXH100B120H3Q0SG product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

NXH100B120H3Q0SG

Availability on request

Manufacturer: onsemi
Category: Transistors - IGBTs - Modules
Package: Tray

Description

IGBT Module Trench Field Stop 2 Independent 1200 V 61 A 186 W Chassis Mount 22-PIM/Q0BOOST (55x32.5)

Datasheet View datasheet

Specifications

Configuration: 2 Independent
Current - Collector (Ic) (Max): 61 A
Current - Collector Cutoff (Max): 200 µA
IGBT Type: Trench Field Stop
Input: Standard
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
Mfr: onsemi
Mounting Type: Chassis Mount
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Tray
Package / Case: Module
Power - Max: 186 W
Series: -
Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max): 1200 V