630A product image

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Product details

630A

Availability on request

Manufacturer: Goford Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 200 V 11A 83W Through Hole TO-252 (DPAK)

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Mfr: Goford Semiconductor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max): 83W
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Series: -
Supplier Device Package: TO-252 (DPAK)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250µA