SI6562CDQ-T1-BE3

Name: SI6562CDQ-T1-BE3
Brand: Vishay Siliconix

Availability on request

Description

Mosfet Array N and P-Channel 20V 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc) 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc) Surface Mount 8-TSSOP

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: N and P-Channel
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
Series: TrenchFET®
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA