2N7002KQBZ product image

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Product details

2N7002KQBZ

Availability on request

Manufacturer: Nexperia USA Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 60 V 720mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 720mA (Ta)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V
Mfr: Nexperia USA Inc.
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 3-XDFN Exposed Pad
Power Dissipation (Max): 420mW (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V
Series: Automotive, AEC-Q101
Supplier Device Package: DFN1110D-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±16V
Vgs(th) (Max) @ Id: 2.6V @ 250µA