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Product details

CE2F3P-T-AZ

Availability on request

Manufacturer: Renesas
Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Bulk

Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 60 V 2 A 1 W Through Hole

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 2 A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V
Mfr: Renesas
Mounting Type: Through Hole
Package: Bulk
Package / Case: 3-SSIP
Power - Max: 1 W
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Series: -
Supplier Device Package: -
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: -
Voltage - Collector Emitter Breakdown (Max): 60 V