GT20N135SRA,S1E product image

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Product details

GT20N135SRA,S1E

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT 1350 V 40 A 312 W Through Hole TO-247

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 80 A
Gate Charge: 185 nC
IGBT Type: -
Input Type: Standard
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power - Max: 312 W
Series: -
Supplier Device Package: TO-247
Switching Energy: -, 700µJ (off)
Td (on/off) @ 25°C: -
Test Condition: 300V, 40A, 39Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max): 1350 V