BUK7E4R6-60E,127 product image

Image shown for reference only. Refer to the product datasheet for exact specifications. 所示图片仅供参考。确切规格请参考产品数据手册即可

Product details

BUK7E4R6-60E,127

Availability on request

Manufacturer: NXP Semiconductors
Category: Transistors - FETs, MOSFETs - Single
Package: I2PAK

Description

N-Channel 60 V 100A (Tc) 234W (Tc) Through Hole I2PAK

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 25 V
Mfr: NXP Semiconductors
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Supplier Device Package: I2PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA