BSP100,135 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

BSP100,135

Availability on request

Manufacturer: NXP Semiconductors
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 30 V 3.2A (Ta) 8.3W (Tc) Surface Mount SOT-223

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
Mfr: NXP Semiconductors
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-261-4, TO-261AA
Power Dissipation (Max): 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Series: TrenchMOS™
Supplier Device Package: SOT-223
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA