FCH077N65F-F085 product image

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Product details

FCH077N65F-F085

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 650 V 54A (Tc) 481W (Tc) Through Hole TO-247-3

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-247-3
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
Series: Automotive, AEC-Q101, SuperFET® II
Supplier Device Package: TO-247-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 5V @ 250µA