APT75GN60B2DQ3G product image

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Product details

APT75GN60B2DQ3G

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT 600 V 155 A 536 W Through Hole

Datasheet Not provided

Specifications

Base Product Number: APT75GN60
Current - Collector (Ic) (Max): 155 A
Current - Collector Pulsed (Icm): 225 A
Gate Charge: 485 nC
IGBT Type: -
Input Type: Standard
Mfr: Microsemi Corporation
Mounting Type: Through Hole
Operating Temperature: -
Package: Tube
Package / Case: TO-264-3, TO-264AA
Power - Max: 536 W
Series: -
Supplier Device Package: -
Switching Energy: 2500µJ (on), 2140µJ (off)
Td (on/off) @ 25°C: 47ns/385ns
Test Condition: 400V, 75A, 1Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max): 600 V