APT60M80JVR product image

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Product details

APT60M80JVR

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 600 V 55A (Tc) 568W (Tc) Chassis Mount ISOTOP®

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 870 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Mfr: Microsemi Corporation
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: SOT-227-4, miniBLOC
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V
Series: POWER MOS V®
Supplier Device Package: ISOTOP®
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 5mA