APT45GP120B2DQ2G product image

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Product details

APT45GP120B2DQ2G

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT PT 1200 V 113 A 625 W Through Hole

Datasheet Not provided

Specifications

Base Product Number: APT45GP120
Current - Collector (Ic) (Max): 113 A
Current - Collector Pulsed (Icm): 170 A
Gate Charge: 185 nC
IGBT Type: PT
Input Type: Standard
Mfr: Microchip Technology
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3 Variant
Power - Max: 625 W
Series: POWER MOS 7®
Switching Energy: 900µJ (on), 905µJ (off)
Td (on/off) @ 25°C: 18ns/100ns
Test Condition: 600V, 45A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Voltage - Collector Emitter Breakdown (Max): 1200 V