APT34F60BG product image

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Product details

APT34F60BG

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 600 V 34A (Tc) 624W (Tc) Through Hole TO-247-3

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V
Mfr: Microsemi Corporation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 624W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 17A, 10V
Series: POWER MOS 8™
Supplier Device Package: TO-247-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 1mA