APT25GP90BDQ1G product image

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Product details

APT25GP90BDQ1G

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT PT 900 V 72 A 417 W Through Hole TO-247 [B]

Datasheet Not provided

Specifications

Base Product Number: APT25GP90
Current - Collector (Ic) (Max): 72 A
Current - Collector Pulsed (Icm): 110 A
Gate Charge: 110 nC
IGBT Type: PT
Input Type: Standard
Mfr: Microchip Technology
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power - Max: 417 W
Series: POWER MOS 7®
Supplier Device Package: TO-247 [B]
Switching Energy: 370µJ (off)
Td (on/off) @ 25°C: 13ns/55ns
Test Condition: 600V, 40A, 4.3Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Voltage - Collector Emitter Breakdown (Max): 900 V