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APT25GN120B2DQ2G product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

APT25GN120B2DQ2G

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - IGBTs - Single
Package
Tube

Description

IGBT NPT, Trench Field Stop 1200 V 67 A 272 W Through Hole

Datasheet Not provided
Specifications
Base Product Number
APT25GN120
Current - Collector (Ic) (Max)
67 A
Current - Collector Pulsed (Icm)
75 A
Gate Charge
155 nC
IGBT Type
NPT, Trench Field Stop
Input Type
Standard
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Package / Case
TO-247-3 Variant
Power - Max
272 W
Series
-
Switching Energy
2.15µJ (off)
Td (on/off) @ 25°C
22ns/280ns
Test Condition
800V, 25A, 4.3Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 25A
Voltage - Collector Emitter Breakdown (Max)
1200 V