APT13GP120KG product image

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Product details

APT13GP120KG

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT PT 1200 V 41 A 250 W Through Hole TO-220 [K]

Datasheet Not provided

Specifications

Base Product Number: APT13GP120
Current - Collector (Ic) (Max): 41 A
Current - Collector Pulsed (Icm): 50 A
Gate Charge: 55 nC
IGBT Type: PT
Input Type: Standard
Mfr: Microsemi Corporation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power - Max: 250 W
Series: POWER MOS 7®
Supplier Device Package: TO-220 [K]
Switching Energy: 114µJ (on), 165µJ (off)
Td (on/off) @ 25°C: 9ns/28ns
Test Condition: 600V, 13A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
Voltage - Collector Emitter Breakdown (Max): 1200 V