BDV65B product image

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Product details

BDV65B

Availability on request

Manufacturer: onsemi
Category: Transistors - Bipolar (BJT) - Single
Package: Tube

Description

Bipolar (BJT) Transistor NPN - Darlington 100 V 10 A 125 W Through Hole SOT-93

Datasheet View datasheet

Specifications

Base Product Number: BDV65
Current - Collector (Ic) (Max): 10 A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Frequency - Transition: -
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-218-3
Power - Max: 125 W
Series: -
Supplier Device Package: SOT-93
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A
Voltage - Collector Emitter Breakdown (Max): 100 V