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Product details

BD810G

Availability on request

Manufacturer: onsemi
Category: Transistors - Bipolar (BJT) - Single
Package: Tube

Description

Bipolar (BJT) Transistor PNP 80 V 10 A 1.5MHz 90 W Through Hole TO-220

Datasheet View datasheet

Specifications

Base Product Number: BD810
Current - Collector (Ic) (Max): 10 A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V
Frequency - Transition: 1.5MHz
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power - Max: 90 W
Series: -
Supplier Device Package: TO-220
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max): 80 V