2N2904 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

2N2904

Availability on request

Manufacturer: Solid State Inc.
Category: Transistors - Bipolar (BJT) - Single
Package: Bulk

Description

Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 600 mW Through Hole TO-39

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 600 mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 200MHz
Mfr: Solid State Inc.
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Power - Max: 600 mW
Series: -
Supplier Device Package: TO-39
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 40 V