AIMW120R035M1HXKSA1 product image

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Product details

AIMW120R035M1HXKSA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3-41

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 18V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 228W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 25A, 18V
Series: Automotive, AEC-Q101, CoolSiC™
Supplier Device Package: PG-TO247-3-41
Technology: SiCFET (Silicon Carbide)
Vgs (Max): +23V, -7V
Vgs(th) (Max) @ Id: 5.7V @ 10mA