BSC019N08NS5ATMA1 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

BSC019N08NS5ATMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 80 V 28A (Ta), 237A (Tc) 3W (Ta), 214W (Tc) Surface Mount PG-TSON-8-3

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc)
Drain to Source Voltage (Vdss): 80 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-PowerTDFN
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Series: OptiMOS™ 5
Supplier Device Package: PG-TSON-8-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.8V @ 146µA