F411MR12W2M1B76BOMA1 product image

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Product details

F411MR12W2M1B76BOMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Arrays
Package: Tray

Description

Mosfet Array 4 N-Channel (Half Bridge) 1200V (1.2kV) 100A (Tj) Chassis Mount AG-EASY1B-2

Datasheet Not provided

Specifications

Base Product Number: F411MR
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Silicon Carbide (SiC)
FET Type: 4 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Mfr: Infineon Technologies
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Tray
Package / Case: Module
Power - Max: -
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Series: EasyPACK™ CoolSiC™
Supplier Device Package: AG-EASY1B-2
Vgs(th) (Max) @ Id: 5.55V @ 40mA