SI2301S-2.3A product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

SI2301S-2.3A

Availability on request

Manufacturer: MDD
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

P-Channel 20 V 2A (Ta) 225mW (Ta) Surface Mount SOT-23

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Mfr: MDD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Package: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Series: SOT-23
Supplier Device Package: SOT-23
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 1V @ 250µA