FDD86081-F085 product image

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Product details

FDD86081-F085

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 100 V 6.7A (Ta), 21.4A (Tc) 3W (Ta), 31.3W (Tc) Surface Mount D-PAK (TO-252)

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21.4A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 493 pF @ 50 V
Mfr: onsemi
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 3W (Ta), 31.3W (Tc)
Rds On (Max) @ Id, Vgs: 31.5mOhm @ 6A, 10V
Series: Automotive, AEC-Q101
Supplier Device Package: D-PAK (TO-252)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4.5V @ 36µA