UF3C120080B7S product image

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Product details

UF3C120080B7S

Availability on request

Manufacturer: UnitedSiC
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 1200 V 28.8A (Tc) 190W (Tc) Surface Mount D2PAK-7

Datasheet View datasheet

Specifications

Base Product Number: UF3C120080
Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc)
Drain to Source Voltage (Vdss): 1200 V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
Mfr: UnitedSiC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
Series: -
Supplier Device Package: D2PAK-7
Technology: SiCFET (Cascode SiCJFET)
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 6V @ 10mA