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FCH029N65S3-F155 product image

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Product details

FCH029N65S3-F155

Availability on request

Manufacturer
onsemi
Category
Transistors - FETs, MOSFETs - Single
Package
Tube

Description

N-Channel 650 V 75A (Tc) 463W (Tc) Through Hole TO-247-3

Specifications
Base Product Number
FCH029
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drain to Source Voltage (Vdss)
650 V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
201 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
6340 pF @ 400 V
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Package / Case
TO-247-3
Power Dissipation (Max)
463W (Tc)
Rds On (Max) @ Id, Vgs
29mOhm @ 37.5A, 10V
Series
SuperFET® III
Supplier Device Package
TO-247-3
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±30V
Vgs(th) (Max) @ Id
4.5V @ 7mA