FDD4N60NZ product image

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Product details

FDD4N60NZ

Availability on request

Manufacturer: Fairchild Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 600 V 3.4A (Tc) 114W (Tc) Surface Mount TO-252, (D-Pak)

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Mfr: Fairchild Semiconductor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V
Series: UniFET-II™
Supplier Device Package: TO-252, (D-Pak)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 5V @ 250µA