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Product details

PDTC115EM,315

Availability on request

Manufacturer: NXP Semiconductors
Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Bulk

Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 20 mA 250 mW Surface Mount DFN1006-3

Datasheet View datasheet

Specifications

Base Product Number: PDTC115
Current - Collector (Ic) (Max): 20 mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Mfr: NXP Semiconductors
Mounting Type: Surface Mount
Package: Bulk
Package / Case: SC-101, SOT-883
Power - Max: 250 mW
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Series: -
Supplier Device Package: DFN1006-3
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50 V