AUIRFSL6535 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

AUIRFSL6535

Availability on request

Manufacturer: International Rectifier
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 300 V 19A (Tc) 210W (Tc) Through Hole PG-TO262-3-901

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 300 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Mfr: International Rectifier
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Series: Automotive, AEC-Q101, HEXFET®
Supplier Device Package: PG-TO262-3-901
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 5V @ 150µA