BUK969R3-100E,118 product image

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Product details

BUK969R3-100E,118

Availability on request

Manufacturer: NXP USA Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 100 V 100A (Tc) 263W (Tc) Surface Mount D2PAK

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 94.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 11650 pF @ 25 V
Mfr: NXP USA Inc.
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Supplier Device Package: D2PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA