FDB0260N1007L product image

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Product details

FDB0260N1007L

Availability on request

Manufacturer: Fairchild Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 100 V 200A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount TO-263-7

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
Mfr: Fairchild Semiconductor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Series: PowerTrench®
Supplier Device Package: TO-263-7
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA