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2SA1962RTU product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

2SA1962RTU

Availability on request

Manufacturer
Fairchild Semiconductor
Category
Transistors - Bipolar (BJT) - Single
Package
Bulk

Description

Bipolar (BJT) Transistor PNP 250 V 17 A 30MHz 130 W Through Hole TO-3P

Specifications
Current - Collector (Ic) (Max)
17 A
Current - Collector Cutoff (Max)
5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
55 @ 1A, 5V
Frequency - Transition
30MHz
Mfr
Fairchild Semiconductor
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Bulk
Package / Case
TO-3P-3, SC-65-3
Power - Max
130 W
Series
-
Supplier Device Package
TO-3P
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Voltage - Collector Emitter Breakdown (Max)
250 V