BUK9Y59-60E,115 product image

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Product details

BUK9Y59-60E,115

Availability on request

Manufacturer: NXP USA Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 60 V 16.7A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 5V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
Mfr: NXP USA Inc.
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: SC-100, SOT-669
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Supplier Device Package: LFPAK56, Power-SO8
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA