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Product details

BD911

Availability on request

Manufacturer: NTE Electronics, Inc
Category: Transistors - Bipolar (BJT) - Single
Package: Bag

Description

Bipolar (BJT) Transistor NPN 100 V 15 A 3MHz 90 W Through Hole TO-220

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 15 A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 4V
Frequency - Transition: 3MHz
Mfr: NTE Electronics, Inc
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Package: Bag
Package / Case: TO-220-3
Power - Max: 90 W
Series: -
Supplier Device Package: TO-220
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.5A, 10A
Voltage - Collector Emitter Breakdown (Max): 100 V