BSP149 E6327 product image

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Product details

BSP149 E6327

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 200 V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
FET Feature: Depletion Mode
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Series: SIPMOS®
Supplier Device Package: PG-SOT223-4
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 1V @ 400µA