BCR169WE6327 product image

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Product details

BCR169WE6327

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Bulk

Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 250 mW Surface Mount PG-SOT323-3-1

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 100 mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 200 MHz
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Package: Bulk
Package / Case: SC-70, SOT-323
Power - Max: 250 mW
Resistor - Base (R1): 4.7 kOhms
Series: Automotive, AEC-Q101
Supplier Device Package: PG-SOT323-3-1
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50 V