2SK2729-E product image

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Product details

2SK2729-E

Availability on request

Manufacturer: Renesas Electronics America Inc
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 500 V 20A (Ta) 150W (Ta) Through Hole TO-3P

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 500 V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Mfr: Renesas Electronics America Inc
Mounting Type: Through Hole
Operating Temperature: 150°C
Package: Bulk
Package / Case: TO-3P-3, SC-65-3
Power Dissipation (Max): 150W (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Series: -
Supplier Device Package: TO-3P
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 3.5V @ 1mA