Goford Semiconductor
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Product details
AUIRLR2905TRL
Availability on request
Description
N-Channel 55 V 42A (Tc) 110W (Tc) Surface Mount D-Pak
Datasheet
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Specifications
- Current - Continuous Drain (Id) @ 25°C
- 42A (Tc)
- Drain to Source Voltage (Vdss)
- 55 V
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 48 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds
- 1700 pF @ 25 V
- Mfr
- International Rectifier
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Package
- Bulk
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max)
- 110W (Tc)
- Rds On (Max) @ Id, Vgs
- 27mOhm @ 25A, 10V
- Series
- HEXFET®
- Supplier Device Package
- D-Pak
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±16V
- Vgs(th) (Max) @ Id
- 2V @ 250µA