FDI045N10A product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

FDI045N10A

Availability on request

Manufacturer: Fairchild Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 100 V 120A (Tc) 263W (Tc) Through Hole I2PAK (TO-262)

Datasheet Not provided

Specifications

Base Product Number: FDI045
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Mfr: Fairchild Semiconductor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Series: PowerTrench®
Supplier Device Package: I2PAK (TO-262)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA