FDFME2P823ZT product image

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Product details

FDFME2P823ZT

Availability on request

Manufacturer: Fairchild Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

P-Channel 20 V 2.6A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (1.6x1.6)

Datasheet View datasheet

Specifications

Base Product Number: FDFME2
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
FET Feature: Schottky Diode (Isolated)
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Mfr: Fairchild Semiconductor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: 6-UFDFN Exposed Pad
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
Series: PowerTrench®
Supplier Device Package: 6-MicroFET (1.6x1.6)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±8V
Vgs(th) (Max) @ Id: 1V @ 250µA